2N3739
Microchip Technology
Microchip Technology
TRANS NPN 300V 1A TO66
$42.84
Available to order
Reference Price (USD)
1+
$42.84000
500+
$42.4116
1000+
$41.9832
1500+
$41.5548
2000+
$41.1264
2500+
$40.698
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the 2N3739 Bipolar Junction Transistor (BJT) from Microchip Technology. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the 2N3739 delivers superior performance in diverse environments. Microchip Technology's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 25mA, 250mA
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 250mA, 10V
- Power - Max: 20 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
Related Products
onsemi
KSD1691GSTU
onsemi
2SA1740E-TD-E
Diodes Incorporated
FZT956QTA
onsemi
NST847BF3T5G
onsemi
BC856BLT3G
Microchip Technology
2N718A
onsemi
BC848BPDW1T1
Infineon Technologies
BC807-25E6327
Rohm Semiconductor
2SAR523UBTL
STMicroelectronics