2N6609
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP 140V 16A TO204
$4.91
Available to order
Reference Price (USD)
1+
$11.74000
20+
$10.62250
40+
$9.72400
100+
$8.82550
260+
$8.15146
500+
$7.47756
1,000+
$6.57896
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the 2N6609 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the 2N6609 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose NTE Electronics, Inc for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 16 A
- Voltage - Collector Emitter Breakdown (Max): 140 V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
- Current - Collector Cutoff (Max): 10mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 4V
- Power - Max: 150 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204 (TO-3)
Related Products
onsemi
NZT753
Central Semiconductor Corp
CMST5089 TR PBFREE
onsemi
2SD1815S-H
Diodes Incorporated
ZXTN25060BZTA
onsemi
CPH3109-TL-E
Nexperia USA Inc.
BC807K-25R
Infineon Technologies
BSP61H6327XTSA1
MACOM Technology Solutions
JANTX2N5153
Nexperia USA Inc.
BC860CW,115
NTE Electronics, Inc