2N6667
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP DARL 60V 10A TO220
$1.56
Available to order
Reference Price (USD)
1+
$1.56000
500+
$1.5444
1000+
$1.5288
1500+
$1.5132
2000+
$1.4976
2500+
$1.482
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2N6667 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the 2N6667 provides consistent performance in demanding applications. Choose NTE Electronics, Inc for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
- Power - Max: 2 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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