2N7002KDW-AU_R1_000A1
Panjit International Inc.
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M
$0.32
Available to order
Reference Price (USD)
1+
$0.32000
500+
$0.3168
1000+
$0.3136
1500+
$0.3104
2000+
$0.3072
2500+
$0.304
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2N7002KDW-AU_R1_000A1 by Panjit International Inc. is a superior addition to the Discrete Semiconductor Products inventory. As a Transistors - FETs, MOSFETs - Arrays device, it features low threshold voltage and high switching speed, ideal for energy-efficient designs. Suitable for applications like smart home devices, power tools, and HVAC systems, the 2N7002KDW-AU_R1_000A1 ensures consistent and dependable performance. Panjit International Inc.'s commitment to quality ensures this MOSFET array exceeds expectations.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V
- Power - Max: 350mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
Related Products
Infineon Technologies
AUIRFN8458TRXTMA1
Diodes Incorporated
DMN10H220LDV-13
Microchip Technology
MSCSM170AM039CT6AG
Diodes Incorporated
DMT3022UEV-7
Goford Semiconductor
G33N03D3
Renesas Electronics America Inc
2SK2596BXTL-E
Renesas
UPA1981TE-T1-A
STMicroelectronics
STL52DN4LF7AG
Fairchild Semiconductor
SI9926DY
Diodes Incorporated