DMT3022UEV-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V-30V POWERDI333
$0.27
Available to order
Reference Price (USD)
2,000+
$0.28720
Exquisite packaging
Discount
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The DMT3022UEV-7 from Diodes Incorporated is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the DMT3022UEV-7 provides reliable performance in demanding environments. Choose Diodes Incorporated for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 903pF @ 15V
- Power - Max: 900mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (Type UXD)
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