FF6MR12W2M1B70BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER EASY AG-EASY2B-2
$465.28
Available to order
Reference Price (USD)
1+
$465.28000
500+
$460.6272
1000+
$455.9744
1500+
$451.3216
2000+
$446.6688
2500+
$442.016
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the FF6MR12W2M1B70BPSA1 by Infineon Technologies, a standout in the Discrete Semiconductor Products category. Specifically designed as a Transistors - FETs, MOSFETs - Arrays solution, this component excels in high-frequency applications with its low on-resistance and fast switching capabilities. Perfect for use in power supplies, motor control, and LED lighting systems, the FF6MR12W2M1B70BPSA1 ensures energy efficiency and robust performance. Infineon Technologies's commitment to quality makes this MOSFET array a top choice for engineers and designers worldwide.
Specifications
- Product Status: Last Time Buy
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
- Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 80mA
- Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 14.7nF @ 800V
- Power - Max: 20mW (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY2B
Related Products
Harris Corporation
RF1S530SM9AS2457
onsemi
NVMFD024N06CT1G
Sanyo
2SK4085LS-CBC11-SY
Diodes Incorporated
DMN3016LDN-13
Microchip Technology
APTC60VDAM45T1G
Diodes Incorporated
DMN16M0UCA6-7
Microchip Technology
APTM100TA35SCTPG
Microchip Technology
APTC60DDAM45T1G
Infineon Technologies
FS03MR12A6MA1LBBPSA1
Renesas