HAT2292C-EL-E
Renesas
Renesas
HAT2292C - N-CHANNEL DUAL POWER
$0.31
Available to order
Reference Price (USD)
1+
$0.31065
500+
$0.3075435
1000+
$0.304437
1500+
$0.3013305
2000+
$0.298224
2500+
$0.2951175
Exquisite packaging
Discount
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Discover the high-performance HAT2292C-EL-E from Renesas, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the HAT2292C-EL-E delivers unmatched performance. Trust Renesas's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.5A
- Rds On (Max) @ Id, Vgs: 205mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: 6-CMFPAK
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