G33N03D3
Goford Semiconductor
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
$0.85
Available to order
Reference Price (USD)
1+
$0.85000
500+
$0.8415
1000+
$0.833
1500+
$0.8245
2000+
$0.816
2500+
$0.8075
Exquisite packaging
Discount
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Enhance your circuit designs with the G33N03D3, a premium Transistors - FETs, MOSFETs - Arrays product from Goford Semiconductor. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the G33N03D3 delivers consistent and reliable operation. Goford Semiconductor's dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 13mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 15V
- Power - Max: 18.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-DFN (3x3)
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