2SC5226A-4-TL-E
onsemi
onsemi
RF TRANS NPN 10V 7GHZ 3MCP
$0.46
Available to order
Reference Price (USD)
3,000+
$0.13213
6,000+
$0.12452
15,000+
$0.11691
30,000+
$0.10803
Exquisite packaging
Discount
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The 2SC5226A-4-TL-E from onsemi is a high-performance RF Bipolar Junction Transistor (BJT) designed for demanding applications in the Discrete Semiconductor Products category. This transistor excels in radio frequency (RF) amplification, offering exceptional gain and low noise characteristics. With its robust construction and reliable performance, the 2SC5226A-4-TL-E is ideal for use in communication systems, RF modules, and signal processing circuits. Key features include high transition frequency, excellent thermal stability, and low distortion, making it a top choice for engineers and designers. Applications include wireless communication devices, radar systems, and RF transceivers. Trust onsemi for superior quality and innovation in RF BJT technology.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1dB @ 1GHz
- Gain: 12dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
- Current - Collector (Ic) (Max): 70mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70 / MCP3
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