2SC5646A-TL-H
onsemi
onsemi
RF TRANS NPN 4V 12.5GHZ 3SSFP
$0.47
Available to order
Reference Price (USD)
8,000+
$0.10855
16,000+
$0.10191
24,000+
$0.09417
Exquisite packaging
Discount
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Introducing the 2SC5646A-TL-H, a high-performance RF Bipolar Junction Transistor (BJT) from onsemi, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The 2SC5646A-TL-H features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on onsemi for top-tier RF BJT solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4V
- Frequency - Transition: 10GHz ~ 12.5GHz
- Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
- Gain: 9.5dB ~ 10.5dB @ 2GHz
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-81
- Supplier Device Package: 3-SSFP
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