2SD1620-TD-E
onsemi
onsemi
TRANS NPN 10V 3A PCP
$0.63
Available to order
Reference Price (USD)
1,000+
$0.22500
2,000+
$0.20610
5,000+
$0.19350
10,000+
$0.18090
25,000+
$0.17880
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2SD1620-TD-E from onsemi is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the 2SD1620-TD-E ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of 2SD1620-TD-E and enhance your electronic projects with this top-quality component from onsemi.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 10 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 60mA, 3A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 3A, 2V
- Power - Max: 500 mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
Related Products
Toshiba Semiconductor and Storage
2SA1943N(S1,E,S)
Central Semiconductor Corp
CZTA27 TR PBFREE
onsemi
2SD1190
Rohm Semiconductor
2SB1260T100R
Fairchild Semiconductor
2N4124
onsemi
SS8550CBU
Rohm Semiconductor
2SA1774TLR
onsemi
MJD210T4
onsemi
2SA1576ART1G
Microchip Technology