2SD2096T114E
Rohm Semiconductor
Rohm Semiconductor
TRANS NPN 60V 3A HRT
$1.16
Available to order
Reference Price (USD)
1+
$1.16000
500+
$1.1484
1000+
$1.1368
1500+
$1.1252
2000+
$1.1136
2500+
$1.102
Exquisite packaging
Discount
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The 2SD2096T114E Bipolar Junction Transistor (BJT) by Rohm Semiconductor is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the 2SD2096T114E provides consistent performance in demanding applications. Choose Rohm Semiconductor for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
- Power - Max: 1.8 W
- Frequency - Transition: 8MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: HRT
- Supplier Device Package: HRT
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