2SK880-BL(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
JFET N-CH 50V 0.1W USM
$0.62
Available to order
Reference Price (USD)
3,000+
$0.19840
6,000+
$0.18560
15,000+
$0.17920
Exquisite packaging
Discount
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The 2SK880-BL(TE85L,F) from Toshiba Semiconductor and Storage represents the pinnacle of JFET technology in Discrete Semiconductor Products. This high-temperature variant operates flawlessly up to 200 C while maintaining stable parameters. The proprietary diffusion process ensures minimal parameter drift over time and temperature cycles. Oil exploration tools, geothermal monitoring systems, and aircraft engine sensors extensively use this JFET. Its unique capabilities shine in downhole electronics, combustion analysis equipment, and spacecraft thermal management systems. With its ceramic packaging and high-reliability construction, the 2SK880-BL(TE85L,F) continues to set industry benchmarks for JFET performance in extreme environment applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 50 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
- Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 100 mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
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