NTE452
NTE Electronics, Inc
NTE Electronics, Inc
JFET-N-CH UHF/VHF AMP
$9.66
Available to order
Reference Price (USD)
1+
$9.66000
500+
$9.5634
1000+
$9.4668
1500+
$9.3702
2000+
$9.2736
2500+
$9.177
Exquisite packaging
Discount
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NTE Electronics, Inc's NTE452 sets new standards for JFET performance in the Discrete Semiconductor Products market. This depletion-mode field-effect transistor features specially processed silicon for minimal parameter dispersion and maximum yield. The innovative design reduces gate leakage current to femtoampere levels while maintaining fast switching characteristics. Primary applications include nuclear instrumentation, submarine cable repeaters, and satellite communication systems. The NTE452 also excels in specialized uses like cryogenic electronics and radiation-hardened circuits. With its gold-metallized contacts and hermetic packaging options, this JFET is the preferred choice for mission-critical applications in extreme environments.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 6 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 300 mW
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AF, TO-72-4 Metal Can
- Supplier Device Package: TO-72
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