MCH5908H-TL-E
onsemi
onsemi
JFET 2N-CH 0.3W MCPH5
$0.72
Available to order
Reference Price (USD)
3,000+
$0.29025
6,000+
$0.27135
15,000+
$0.26820
Exquisite packaging
Discount
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Introducing the MCH5908H-TL-E from onsemi's premium Discrete Semiconductor Products - a JFET engineered for high-frequency applications. This RF-optimized transistor offers outstanding gain-bandwidth product and minimal feedback capacitance. The advanced epitaxial process ensures tight parameter distribution and excellent yield. Wireless infrastructure equipment manufacturers utilize the MCH5908H-TL-E in base station receivers, software-defined radios, and radar systems. Its low intermodulation distortion makes it perfect for multi-carrier cellular systems and satellite transponders. The device also finds use in specialized applications like quantum computing interfaces and terahertz wave detectors, demonstrating its exceptional high-frequency capabilities.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 16 mA @ 5 V
- Current Drain (Id) - Max: 50 mA
- Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 µA
- Input Capacitance (Ciss) (Max) @ Vds: 10.5pF @ 5V
- Resistance - RDS(On): -
- Power - Max: 300 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 5-SMD, Flat Leads
- Supplier Device Package: 5-MCPH
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