MQ2N5114
Microchip Technology
Microchip Technology
P-CHANNEL J-FET
$59.13
Available to order
Reference Price (USD)
1+
$59.13000
500+
$58.5387
1000+
$57.9474
1500+
$57.3561
2000+
$56.7648
2500+
$56.1735
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Microchip Technology's MQ2N5114 sets new standards for JFET performance in the Discrete Semiconductor Products market. This depletion-mode field-effect transistor features specially processed silicon for minimal parameter dispersion and maximum yield. The innovative design reduces gate leakage current to femtoampere levels while maintaining fast switching characteristics. Primary applications include nuclear instrumentation, submarine cable repeaters, and satellite communication systems. The MQ2N5114 also excels in specialized uses like cryogenic electronics and radiation-hardened circuits. With its gold-metallized contacts and hermetic packaging options, this JFET is the preferred choice for mission-critical applications in extreme environments.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
- Resistance - RDS(On): 75 Ohms
- Power - Max: 500 mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18 (TO-206AA)
Related Products
NTE Electronics, Inc
NTE326
onsemi
2SK715U-AC
Fairchild Semiconductor
PN4118
Linear Integrated Systems, Inc.
SST202 SOT-23 3L
Linear Integrated Systems, Inc.
LS421 SOIC 8L
Microchip Technology
MQ2N2609
onsemi
MMBF4093
Solid State Inc.
2N4859A
onsemi
MMBFJ111
Fairchild Semiconductor