5N20A
Goford Semiconductor
Goford Semiconductor
N200V,RD(MAX)<650M@10V,VTH1V~3V,
$0.70
Available to order
Reference Price (USD)
1+
$0.70000
500+
$0.693
1000+
$0.686
1500+
$0.679
2000+
$0.672
2500+
$0.665
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 5N20A by Goford Semiconductor is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Goford Semiconductor for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 650mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 78W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
PN Junction Semiconductor
P3M06060L8
Renesas Electronics America Inc
2SK3573-AZ
IXYS
IXFP36N20X3
Rohm Semiconductor
RQ1E070RPTR
STMicroelectronics
STH180N10F3-2
onsemi
NVMYS2D2N06CLTWG
Harris Corporation
RFP15P05
onsemi
NTMYS2D4N04CTWG
Infineon Technologies
BSC057N08NS3GATMA1
Alpha & Omega Semiconductor Inc.