A2V09H525-04NR6
NXP USA Inc.
NXP USA Inc.
AIRFAST RF LDMOS WIDEBAND INTEGR
$202.31
Available to order
Reference Price (USD)
150+
$136.64047
Exquisite packaging
Discount
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The A2V09H525-04NR6 by NXP USA Inc. is a premium RF MOSFET transistor belonging to the Discrete Semiconductor Products family, specifically the Transistors - FETs, MOSFETs - RF segment. This component excels in high-frequency applications with its low gate charge, high breakdown voltage, and excellent thermal management. Ideal for RF power amplification, the A2V09H525-04NR6 is frequently utilized in amateur radio equipment, cellular infrastructure, and aerospace communication systems. Its reliable performance under extreme conditions makes it a favorite among design engineers. Whether you're developing IoT devices or advanced military communication tools, NXP USA Inc.'s A2V09H525-04NR6 delivers unmatched efficiency and signal integrity for your RF designs.
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 720MHz ~ 960MHz
- Gain: 18.9dB
- Voltage - Test: 48 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 688 mA
- Power - Output: 120W
- Voltage - Rated: 105 V
- Package / Case: OM-1230-4L
- Supplier Device Package: OM-1230-4L
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