A3I20X050NR1
NXP USA Inc.
NXP USA Inc.
AIRFAST RF LDMOS WIDEBAND INTEGR
$59.72
Available to order
Reference Price (USD)
1+
$59.72400
500+
$59.12676
1000+
$58.52952
1500+
$57.93228
2000+
$57.33504
2500+
$56.7378
Exquisite packaging
Discount
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As a leading solution in the Discrete Semiconductor Products market, the A3I20X050NR1 RF MOSFET from NXP USA Inc. (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The A3I20X050NR1's advanced design ensures maximum power transfer with minimal distortion. With NXP USA Inc.'s expertise in semiconductor innovation, the A3I20X050NR1 provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 1.8GHz ~ 2.2GHz
- Gain: 29.3dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 145 mA
- Power - Output: 6.3W
- Voltage - Rated: 65 V
- Package / Case: OM-400-8
- Supplier Device Package: OM-400-8
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