AFGB30T65SQDN
onsemi
onsemi
650V/30A FS4 IGBT TO263 A
$4.76
Available to order
Reference Price (USD)
800+
$2.56620
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The AFGB30T65SQDN by onsemi is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the AFGB30T65SQDN delivers robust performance. onsemi's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate AFGB30T65SQDN into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 220 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 56 nC
- Td (on/off) @ 25°C: 14.5ns/63.2ns
- Test Condition: 400V, 30A, 6Ohm, 15V
- Reverse Recovery Time (trr): 245 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK-3 (TO-263-3)
Related Products
Infineon Technologies
SKB02N60ATMA1
IXYS
IXXX100N60B3H1
Infineon Technologies
IKD03N60RFATMA1
Alpha & Omega Semiconductor Inc.
AOD7B65M3
STMicroelectronics
STGW80H65DFB
Rohm Semiconductor
RGT40NS65DGTL
onsemi
SGH40N60UFDTU
Harris Corporation
HGT1S7N60C3DS
Infineon Technologies
AIKB30N65DF5ATMA1
IXYS