AFGY120T65SPD
onsemi
onsemi
IGBT - 650 V 120 A FS3 FOR EV TR
$12.26
Available to order
Reference Price (USD)
1+
$12.26000
500+
$12.1374
1000+
$12.0148
1500+
$11.8922
2000+
$11.7696
2500+
$11.647
Exquisite packaging
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The AFGY120T65SPD from onsemi is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose AFGY120T65SPD for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 160 A
- Current - Collector Pulsed (Icm): 360 A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A
- Power - Max: 714 W
- Switching Energy: 6.6mJ (on), 3.8mJ (off)
- Input Type: Standard
- Gate Charge: 125 nC
- Td (on/off) @ 25°C: 40ns/80ns
- Test Condition: 400V, 120A, 5Ohm, 15V
- Reverse Recovery Time (trr): 107 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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