AIGB15N65H5ATMA1
Infineon Technologies
Infineon Technologies
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$3.31
Available to order
Reference Price (USD)
1+
$3.31000
500+
$3.2769
1000+
$3.2438
1500+
$3.2107
2000+
$3.1776
2500+
$3.1445
Exquisite packaging
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The AIGB15N65H5ATMA1 Single IGBT transistor by Infineon Technologies is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the AIGB15N65H5ATMA1 provides consistent performance in varied conditions. Rely on Infineon Technologies's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
- Power - Max: 105 W
- Switching Energy: 0.16mJ (on), 0.04mJ (off)
- Input Type: Standard
- Gate Charge: 40 nC
- Td (on/off) @ 25°C: 24ns/22ns
- Test Condition: 400V, 7.5A, 39Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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