IRGS8B60KTRLPBF
Infineon Technologies

Infineon Technologies
IGBT 600V 28A 167W D2PAK
$0.80
Available to order
Reference Price (USD)
1+
$0.80000
500+
$0.792
1000+
$0.784
1500+
$0.776
2000+
$0.768
2500+
$0.76
Exquisite packaging
Discount
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Enhance your electronic projects with the IRGS8B60KTRLPBF Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IRGS8B60KTRLPBF ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IRGS8B60KTRLPBF for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 28 A
- Current - Collector Pulsed (Icm): 34 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
- Power - Max: 167 W
- Switching Energy: 160µJ (on), 160µJ (off)
- Input Type: Standard
- Gate Charge: 29 nC
- Td (on/off) @ 25°C: 23ns/140ns
- Test Condition: 400V, 8A, 50Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK