FGHL50T65MQD
onsemi
onsemi
IGBT 650V 50A TO247
$2.78
Available to order
Reference Price (USD)
1+
$2.78369
500+
$2.7558531
1000+
$2.7280162
1500+
$2.7001793
2000+
$2.6723424
2500+
$2.6445055
Exquisite packaging
Discount
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The FGHL50T65MQD Single IGBT transistor by onsemi is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The FGHL50T65MQD ensures precise power control and long-term stability. With onsemi's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate FGHL50T65MQD into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
- Power - Max: 268 W
- Switching Energy: 1.05mJ (on), 700µJ (off)
- Input Type: Standard
- Gate Charge: 94 nC
- Td (on/off) @ 25°C: 23ns/120ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 32 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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