IKP30N65H5XKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 650V 55A TO220-3
$3.24
Available to order
Reference Price (USD)
1+
$3.29000
10+
$2.95700
100+
$2.42260
500+
$2.06232
1,000+
$1.73930
Exquisite packaging
Discount
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The IKP30N65H5XKSA1 by Infineon Technologies is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the IKP30N65H5XKSA1 delivers robust performance. Infineon Technologies's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate IKP30N65H5XKSA1 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 55 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 188 W
- Switching Energy: 280µJ (on), 100µJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 19ns/177ns
- Test Condition: 400V, 15A, 23Ohm, 15V
- Reverse Recovery Time (trr): 51 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3
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