RGW50TK65GVC11
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
$5.51
Available to order
Reference Price (USD)
1+
$5.51000
500+
$5.4549
1000+
$5.3998
1500+
$5.3447
2000+
$5.2896
2500+
$5.2345
Exquisite packaging
Discount
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Upgrade your power management systems with the RGW50TK65GVC11 Single IGBT transistor from Rohm Semiconductor. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the RGW50TK65GVC11 provides reliable and efficient operation. Rohm Semiconductor's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose RGW50TK65GVC11 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
- Power - Max: 67 W
- Switching Energy: 390µJ (on), 430µJ (off)
- Input Type: Standard
- Gate Charge: 73 nC
- Td (on/off) @ 25°C: 35ns/102ns
- Test Condition: 400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PFM, SC-93-3
- Supplier Device Package: TO-3PFM
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