IXXH60N65B4
IXYS

IXYS
IGBT 650V 116A 455W TO247AD
$7.72
Available to order
Reference Price (USD)
1+
$6.76000
10+
$6.03800
30+
$5.43367
120+
$4.95075
270+
$4.46774
510+
$4.00890
1,020+
$3.38100
2,520+
$3.22000
Exquisite packaging
Discount
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The IXXH60N65B4 by IXYS is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the IXXH60N65B4 delivers robust performance. IXYS's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate IXXH60N65B4 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 116 A
- Current - Collector Pulsed (Icm): 250 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
- Power - Max: 455 W
- Switching Energy: 3.13mJ (on), 1.15mJ (off)
- Input Type: Standard
- Gate Charge: 95 nC
- Td (on/off) @ 25°C: 37ns/145ns
- Test Condition: 400V, 60A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXXH)