IHW50N65R5XKSA1
Infineon Technologies
Infineon Technologies
IGBT 650V 80A TO247-3
$4.78
Available to order
Reference Price (USD)
1+
$5.30000
10+
$4.79100
240+
$3.98658
720+
$3.44403
1,200+
$2.95763
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power management systems with the IHW50N65R5XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IHW50N65R5XKSA1 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IHW50N65R5XKSA1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
- Power - Max: 282 W
- Switching Energy: 740µJ (on), 180µJ (off)
- Input Type: Standard
- Gate Charge: 230 nC
- Td (on/off) @ 25°C: 26ns/220ns
- Test Condition: 400V, 25A, 8Ohm, 15V
- Reverse Recovery Time (trr): 95 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
Related Products
Infineon Technologies
IKQ100N60TAXKSA1
IXYS
IXGH48N60B3D1
Rohm Semiconductor
RGWS60TS65DGC13
Infineon Technologies
SGB15N60
IXYS
IXGA20N120A3-TRL
Infineon Technologies
IRGS8B60KTRLPBF
Infineon Technologies
IRG8P08N120KDPBF
Fairchild Semiconductor
ISL9V3036D3ST
IXYS
IXXH60N65B4
STMicroelectronics