APT25GN120B2DQ2G
Microchip Technology
Microchip Technology
IGBT 1200V 67A 272W TMAX
$10.00
Available to order
Reference Price (USD)
56+
$9.88000
Exquisite packaging
Discount
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The APT25GN120B2DQ2G Single IGBT transistor by Microchip Technology is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The APT25GN120B2DQ2G ensures precise power control and long-term stability. With Microchip Technology's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate APT25GN120B2DQ2G into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: NPT, Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 67 A
- Current - Collector Pulsed (Icm): 75 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
- Power - Max: 272 W
- Switching Energy: 2.15µJ (off)
- Input Type: Standard
- Gate Charge: 155 nC
- Td (on/off) @ 25°C: 22ns/280ns
- Test Condition: 800V, 25A, 4.3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: -
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