RJP65T43DPQ-A0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT TRENCH 650V 60A TO247A
$3.01
Available to order
Reference Price (USD)
1+
$4.22000
10+
$3.76700
25+
$3.39000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the RJP65T43DPQ-A0#T2 Single IGBT transistor from Renesas Electronics America Inc. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the RJP65T43DPQ-A0#T2 ensures precision and reliability. Renesas Electronics America Inc's cutting-edge technology guarantees a component that meets the highest industry standards. Choose RJP65T43DPQ-A0#T2 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
- Power - Max: 150 W
- Switching Energy: 170µJ (on), 130µJ (off)
- Input Type: Standard
- Gate Charge: 69 nC
- Td (on/off) @ 25°C: 35ns/105ns
- Test Condition: 400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247A
Related Products
IXYS
IXXX160N65C4
Alpha & Omega Semiconductor Inc.
AOT20B65M1
IXYS
IXBT12N300HV
Bourns Inc.
BIDW30N60T
STMicroelectronics
STGWT60V60DF
Infineon Technologies
AIGB50N65H5ATMA1
Infineon Technologies
AUIRGDC0250
onsemi
FGHL50T65SQDT
Microchip Technology
APT54GA60BD30
Microchip Technology