FGHL50T65SQDT
onsemi
onsemi
IGBT, 650 V, 50 A FIELD STOP TRE
$6.78
Available to order
Reference Price (USD)
1+
$6.78000
500+
$6.7122
1000+
$6.6444
1500+
$6.5766
2000+
$6.5088
2500+
$6.441
Exquisite packaging
Discount
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Optimize your power systems with the FGHL50T65SQDT Single IGBT transistor from onsemi. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the FGHL50T65SQDT delivers consistent and reliable operation. Trust onsemi's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 268 W
- Switching Energy: 223µJ (on), 91.13µJ (off)
- Input Type: Standard
- Gate Charge: 99.7 nC
- Td (on/off) @ 25°C: 22.8ns/70ns
- Test Condition: 400V, 12.5A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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