RGW80TK65DGVC11
Rohm Semiconductor
Rohm Semiconductor
650V 40A FIELD STOP TRENCH IGBT
$6.57
Available to order
Reference Price (USD)
1+
$5.75000
10+
$5.16500
25+
$4.88240
100+
$4.23150
450+
$4.01451
900+
$3.60220
1,350+
$3.03800
Exquisite packaging
Discount
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The RGW80TK65DGVC11 Single IGBT transistor by Rohm Semiconductor is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The RGW80TK65DGVC11 ensures precise power control and long-term stability. With Rohm Semiconductor's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate RGW80TK65DGVC11 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 39 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
- Power - Max: 81 W
- Switching Energy: 760µJ (on), 720µJ (off)
- Input Type: Standard
- Gate Charge: 110 nC
- Td (on/off) @ 25°C: 44ns/143ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 92 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PFM, SC-93-3
- Supplier Device Package: TO-3PFM
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