STGB10M65DF2
STMicroelectronics
STMicroelectronics
IGBT 650V 10A D2PAK
$1.27
Available to order
Reference Price (USD)
1,000+
$1.54350
2,000+
$1.47000
Exquisite packaging
Discount
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Experience top-tier performance with the STGB10M65DF2 Single IGBT transistor from STMicroelectronics. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the STGB10M65DF2 ensures energy efficiency and reliability. Trust STMicroelectronics's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 40 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
- Power - Max: 115 W
- Switching Energy: 120µJ (on), 270µJ (off)
- Input Type: Standard
- Gate Charge: 28 nC
- Td (on/off) @ 25°C: 19ns/91ns
- Test Condition: 400V, 10A, 22Ohm, 15V
- Reverse Recovery Time (trr): 96 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK (TO-263)
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