IKD15N60RAATMA1
Infineon Technologies
Infineon Technologies
IGBT 600V 30A 250W TO252-3
$1.80
Available to order
Reference Price (USD)
2,500+
$1.27774
Exquisite packaging
Discount
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The IKD15N60RAATMA1 by Infineon Technologies is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the IKD15N60RAATMA1 delivers robust performance. Infineon Technologies's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate IKD15N60RAATMA1 into your designs for optimal power control.
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
- Power - Max: 250 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 90 nC
- Td (on/off) @ 25°C: 16ns/183ns
- Test Condition: 400V, 15A, 15Ohm, 15V
- Reverse Recovery Time (trr): 110 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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