RGTVX2TS65GC11
Rohm Semiconductor
Rohm Semiconductor
2US SHORT-CIRCUIT TOLERANCE, 650
$6.89
Available to order
Reference Price (USD)
1+
$6.89000
500+
$6.8211
1000+
$6.7522
1500+
$6.6833
2000+
$6.6144
2500+
$6.5455
Exquisite packaging
Discount
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The RGTVX2TS65GC11 Single IGBT transistor by Rohm Semiconductor is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the RGTVX2TS65GC11 provides consistent performance in varied conditions. Rely on Rohm Semiconductor's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 111 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
- Power - Max: 319 W
- Switching Energy: 2.08mJ (on), 1.15mJ (off)
- Input Type: Standard
- Gate Charge: 123 nC
- Td (on/off) @ 25°C: 49ns/150ns
- Test Condition: 400V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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