IXYA20N120B4HV
IXYS
IXYS
IGBT 1200V 20A GENX4 XPT TO263D2
$10.61
Available to order
Reference Price (USD)
1+
$10.61000
500+
$10.5039
1000+
$10.3978
1500+
$10.2917
2000+
$10.1856
2500+
$10.0795
Exquisite packaging
Discount
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Enhance your electronic projects with the IXYA20N120B4HV Single IGBT transistor from IXYS. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IXYA20N120B4HV ensures precision and reliability. IXYS's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IXYA20N120B4HV for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 76 A
- Current - Collector Pulsed (Icm): 130 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
- Power - Max: 375 W
- Switching Energy: 3.9mJ (on), 1.6mJ (off)
- Input Type: Standard
- Gate Charge: 44 nC
- Td (on/off) @ 25°C: 15ns/200ns
- Test Condition: 960mV, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 47 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
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