IKW25N120T2FKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 1200V 50A TO247-3
$6.87
Available to order
Reference Price (USD)
1+
$7.32000
10+
$6.66400
240+
$5.60642
720+
$4.94886
1,200+
$4.37706
Exquisite packaging
Discount
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Experience top-tier performance with the IKW25N120T2FKSA1 Single IGBT transistor from Infineon Technologies. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the IKW25N120T2FKSA1 ensures energy efficiency and reliability. Trust Infineon Technologies's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
- Power - Max: 349 W
- Switching Energy: 2.9mJ
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 27ns/265ns
- Test Condition: 600V, 25A, 16.4Ohm, 15V
- Reverse Recovery Time (trr): 195 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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