RJH65T14DPQ-A0#T0
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT TRENCH 650V 100A TO247A
$4.19
Available to order
Reference Price (USD)
1+
$4.19000
500+
$4.1481
1000+
$4.1062
1500+
$4.0643
2000+
$4.0224
2500+
$3.9805
Exquisite packaging
Discount
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Optimize your power systems with the RJH65T14DPQ-A0#T0 Single IGBT transistor from Renesas Electronics America Inc. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the RJH65T14DPQ-A0#T0 delivers consistent and reliable operation. Trust Renesas Electronics America Inc's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A
- Power - Max: 250 W
- Switching Energy: 1.3mJ (on), 1.2mJ (off)
- Input Type: Standard
- Gate Charge: 80 nC
- Td (on/off) @ 25°C: 38ns/125ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 250 ns
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247A
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