IXYH40N120B3D1
IXYS
IXYS
IGBT 1200V 86A 480W TO247
$11.92
Available to order
Reference Price (USD)
1+
$9.32000
10+
$8.38700
30+
$7.64133
120+
$6.89592
270+
$6.33674
510+
$5.77763
1,020+
$5.03213
Exquisite packaging
Discount
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Upgrade your power management systems with the IXYH40N120B3D1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXYH40N120B3D1 provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXYH40N120B3D1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 86 A
- Current - Collector Pulsed (Icm): 180 A
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
- Power - Max: 480 W
- Switching Energy: 2.7mJ (on), 1.6mJ (off)
- Input Type: Standard
- Gate Charge: 87 nC
- Td (on/off) @ 25°C: 22ns/177ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXYH)
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