RGS30TSX2GC11
Rohm Semiconductor
Rohm Semiconductor
10US SHORT-CIRCUIT TOLERANCE, 12
$6.35
Available to order
Reference Price (USD)
1+
$6.35000
500+
$6.2865
1000+
$6.223
1500+
$6.1595
2000+
$6.096
2500+
$6.0325
Exquisite packaging
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The RGS30TSX2GC11 by Rohm Semiconductor is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With Rohm Semiconductor's reputation for quality, the RGS30TSX2GC11 is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
- Power - Max: 267 W
- Switching Energy: 740µJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 41 nC
- Td (on/off) @ 25°C: 30ns/70ns
- Test Condition: 600V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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