RGT40TS65DGC13
Rohm Semiconductor
Rohm Semiconductor
5US SHORT-CIRCUIT TOLERANCE, 650
$9.32
Available to order
Reference Price (USD)
1+
$9.32000
500+
$9.2268
1000+
$9.1336
1500+
$9.0404
2000+
$8.9472
2500+
$8.854
Exquisite packaging
Discount
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Optimize your power systems with the RGT40TS65DGC13 Single IGBT transistor from Rohm Semiconductor. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the RGT40TS65DGC13 delivers consistent and reliable operation. Trust Rohm Semiconductor's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
- Power - Max: 144 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 40 nC
- Td (on/off) @ 25°C: 22ns/75ns
- Test Condition: 400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 58 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247G
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