FGD3N60UNDF
onsemi
onsemi
IGBT 600V 6A 60W DPAK
$1.35
Available to order
Reference Price (USD)
2,500+
$0.47190
5,000+
$0.45073
Exquisite packaging
Discount
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The FGD3N60UNDF by onsemi is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the FGD3N60UNDF delivers robust performance. onsemi's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate FGD3N60UNDF into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 6 A
- Current - Collector Pulsed (Icm): 9 A
- Vce(on) (Max) @ Vge, Ic: 2.52V @ 15V, 3A
- Power - Max: 60 W
- Switching Energy: 52µJ (on), 30µJ (off)
- Input Type: Standard
- Gate Charge: 1.6 nC
- Td (on/off) @ 25°C: 5.5ns/22ns
- Test Condition: 400V, 3A, 10Ohm, 15V
- Reverse Recovery Time (trr): 21 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
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