NGTB50N65FL2WG
onsemi
onsemi
IGBT TRENCH/FS 650V 100A TO247-3
$6.53
Available to order
Reference Price (USD)
90+
$6.00867
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience top-tier performance with the NGTB50N65FL2WG Single IGBT transistor from onsemi. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the NGTB50N65FL2WG ensures energy efficiency and reliability. Trust onsemi's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
- Power - Max: 417 W
- Switching Energy: 1.5mJ (on), 460µJ (off)
- Input Type: Standard
- Gate Charge: 220 nC
- Td (on/off) @ 25°C: 100ns/237ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 94 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
Related Products
Alpha & Omega Semiconductor Inc.
AOK30B65M2
Infineon Technologies
IRG7PH46UDPBF
onsemi
ISL9V3040D3ST-F085C
Alpha & Omega Semiconductor Inc.
AOK40B65H2AL
Infineon Technologies
AIKW50N65DH5XKSA1
Harris Corporation
IGT7E20CS
Rohm Semiconductor
RGTH80TK65GC11
Microchip Technology
APT45GR65B
IXYS
IXYH82N120C3
Infineon Technologies