IKZA75N65SS5XKSA1
Infineon Technologies
Infineon Technologies
INDUSTRY 14
$17.05
Available to order
Reference Price (USD)
1+
$17.05000
500+
$16.8795
1000+
$16.709
1500+
$16.5385
2000+
$16.368
2500+
$16.1975
Exquisite packaging
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Enhance your electronic projects with the IKZA75N65SS5XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IKZA75N65SS5XKSA1 ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IKZA75N65SS5XKSA1 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A
- Power - Max: 395 W
- Switching Energy: 240µJ (on), 750µJ (off)
- Input Type: Standard
- Gate Charge: 164 nC
- Td (on/off) @ 25°C: 22ns/145ns
- Test Condition: 400V, 75A, 5.6Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: PG-TO247-4-3
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