STGB20H65DFB2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP 650 V, 20
$2.35
Available to order
Reference Price (USD)
1+
$2.35000
500+
$2.3265
1000+
$2.303
1500+
$2.2795
2000+
$2.256
2500+
$2.2325
Exquisite packaging
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The STGB20H65DFB2 by STMicroelectronics is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With STMicroelectronics's reputation for quality, the STGB20H65DFB2 is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
- Power - Max: 147 W
- Switching Energy: 265µJ (on), 214µJ (off)
- Input Type: Standard
- Gate Charge: 56 nC
- Td (on/off) @ 25°C: 16ns/78.8ns
- Test Condition: 400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 215 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
- Supplier Device Package: D2PAK-3
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