IKFW50N65EH5XKSA1
Infineon Technologies
Infineon Technologies
IKFW50N65EH5XKSA1
$7.14
Available to order
Reference Price (USD)
1+
$7.14000
500+
$7.0686
1000+
$6.9972
1500+
$6.9258
2000+
$6.8544
2500+
$6.783
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The IKFW50N65EH5XKSA1 from Infineon Technologies is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose IKFW50N65EH5XKSA1 for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 59 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 124 W
- Switching Energy: 1.2mJ (on), 400µJ (off)
- Input Type: Standard
- Gate Charge: 95 nC
- Td (on/off) @ 25°C: 20ns/138ns
- Test Condition: 400V, 40A, 15.1Ohm, 15V
- Reverse Recovery Time (trr): 52 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-HSIP247-3-2
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