RGW60TK65GVC11
Rohm Semiconductor
Rohm Semiconductor
650V 30A FIELD STOP TRENCH IGBT
$5.90
Available to order
Reference Price (USD)
1+
$4.64000
10+
$4.16500
25+
$3.93760
100+
$3.41250
450+
$3.23751
900+
$2.90500
1,350+
$2.45000
Exquisite packaging
Discount
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Optimize your power systems with the RGW60TK65GVC11 Single IGBT transistor from Rohm Semiconductor. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the RGW60TK65GVC11 delivers consistent and reliable operation. Trust Rohm Semiconductor's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 33 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
- Power - Max: 72 W
- Switching Energy: 480µJ (on), 490µJ (off)
- Input Type: Standard
- Gate Charge: 84 nC
- Td (on/off) @ 25°C: 37ns/114ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PFM, SC-93-3
- Supplier Device Package: TO-3PFM
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