STGW100H65FB2-4
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP, 650 V, 1
$8.85
Available to order
Reference Price (USD)
1+
$8.85000
500+
$8.7615
1000+
$8.673
1500+
$8.5845
2000+
$8.496
2500+
$8.4075
Exquisite packaging
Discount
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Enhance your electronic projects with the STGW100H65FB2-4 Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the STGW100H65FB2-4 ensures precision and reliability. STMicroelectronics's cutting-edge technology guarantees a component that meets the highest industry standards. Choose STGW100H65FB2-4 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 145 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
- Power - Max: 441 W
- Switching Energy: 1.06mJ (on), 1.14mJ (off)
- Input Type: Standard
- Gate Charge: 288 nC
- Td (on/off) @ 25°C: 23ns/141ns
- Test Condition: 400V, 100A, 3.3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: TO-247-4
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