IKP15N65F5XKSA1
Infineon Technologies
Infineon Technologies
IGBT 650V 30A TO220-3
$2.96
Available to order
Reference Price (USD)
1+
$2.68000
10+
$2.40600
100+
$1.93370
500+
$1.58870
1,000+
$1.31635
Exquisite packaging
Discount
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Optimize your power systems with the IKP15N65F5XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IKP15N65F5XKSA1 delivers consistent and reliable operation. Trust Infineon Technologies's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
- Power - Max: 105 W
- Switching Energy: 130µJ (on), 40µJ (off)
- Input Type: Standard
- Gate Charge: 38 nC
- Td (on/off) @ 25°C: 17ns/150ns
- Test Condition: 400V, 7.5A, 39Ohm, 15V
- Reverse Recovery Time (trr): 50 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3
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