STGB30H60DFB
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
$1.97
Available to order
Reference Price (USD)
1,000+
$1.42800
2,000+
$1.34000
5,000+
$1.29600
Exquisite packaging
Discount
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The STGB30H60DFB by STMicroelectronics is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the STGB30H60DFB delivers robust performance. STMicroelectronics's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate STGB30H60DFB into your designs for optimal power control.
Specifications
- Product Status: Last Time Buy
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
- Power - Max: 260 W
- Switching Energy: 383µJ (on), 293µJ (off)
- Input Type: Standard
- Gate Charge: 149 nC
- Td (on/off) @ 25°C: 37ns/146ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 53 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK (TO-263)
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